![]() ![]() ![]() For example, two dimensional (2D) MoS \(\) and 5 mV/V, respectively. Recently, efforts have been devoted to novel structure of FETs using low-dimensional materials as a platform. Yet satisfaction cannot be met with the iterative progresses of semiconducting industry, as the further improvement of optical lithography technique is extremely difficult 7. Fin field effect transistor (FinFET) is the newest technology compared to metal oxide semiconductor field effect transistors (FET), and we designed various structures of FinFETs as double-gate FETs, trigate FETs, and gate all around field effect transistor in nanometer technology using Silvaco TCAD tool. However, this is forcibly limited by the precision of state-of-the-art lithography tools, while the narrowest line width of which can reach \(\sim\)6 nm 6. The impact of work-function variation (WFV) on performance of an inversion-mode (IM) dual-metal gate (DMG) fin field-effect transistor (FinFET) was. To date, most of the FinFETs are fabricated by a top-down method, with the conducting fin etched from bulk plane 5. One way to mitigate this issue is to take advantage of the vertical dimension and fabricate fin-like conduction channel wrapped by oxides and gate electrodes, thus giving rise to a FinFET configuration with smaller device footprint, higher gate efficiency, and lower power consumption 4. Nevertheless, when the channel width becomes at the order of sub-10 nm, performances of the conventional planar-structured FETs are often poisoned by the quantum confinement effects 3. As depicted by the famed Moore’s law, the number of transistors per unit area in an integrated circuit is expected to be exponentially increasing in a yearly time scale, which requires a continuous reduction of transistor size 2. Field effect transistors, which usually have the architecture of a conduction channel gated through an insulating layer, are known to be the core of modern semiconductor technologies 1. ![]()
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